Image sensor applied with device isolation technique for reducing dark signals and fabrication method thereof
US7939386B2 · kind B2 · utility
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12References
22Claims
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Key dates
| Filing date | Mar 23, 2009 |
| Grant date | May 10, 2011 |
| Priority date | — |
| Expiry date | Mar 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
The present invention relates to an image sensor applied with a device isolation technique for reducing dark signals and a fabrication method thereof. The image sensor includes: a logic unit; and a light collection unit in which a plurality of photodiodes is formed, wherein the photodiodes are isolated from each other by a field ion-implantation region formed under a surface of a substrate and an insulation layer formed on the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.