Base oxide engineering for high-K gate stacks
US7939396B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Jun 9, 2006 |
| Grant date | May 10, 2011 |
| Priority date | — |
| Expiry date | Dec 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor structure includes providing a semiconductor substrate, performing a hydrogen annealing to the semiconductor substrate, forming a base oxide layer after the step of hydrogen annealing, and forming a high-k dielectric layer on the base oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.