Patent · US Active

Semiconductor light emitting device with transparent substrate and reflective slope

US7939838B2 · kind B2 · utility

1Cited by
0References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 30, 2006
Grant dateMay 10, 2011
Priority date
Expiry dateJul 1, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/831

Abstract

A semiconductor light emitting device includes a semiconductor layer having a recess extending downwardly from a top surface thereof along a pattern of a closed line so that said recess defines and encloses a region of the semiconductor layer that emits light, said semiconductor layer having a downward slope in at least a portion of its side end face located outside the closed line pattern of said recess; a first electrode on said downward slope of the side end face of the semiconductor layer and electrically in contact with a portion of said semiconductor layer, wherein said first electrode downwardly reflects light that is emitted by said semiconductor layer and that reaches the first electrode; and a second electrode electrically in contact with a portion of said semiconductor layer located inside the closed line pattern of said recess.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.