Patent · US Active

Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same

US7939844B2 · kind B2 · utility

48Cited by

77References

35Claims

0Family size

Assignee

OSRAM GmbH · DE

Inventors

Berthold Hahn · Hemau, DE
Ulrich Jacob · Regensburg, DE
Hans-Jürgen Lugauer · Sinzing, DE
Manfred Mundbrod-Vangerow · Oxenbronn, DE

Key dates

Filing date	May 30, 2007
Grant date	May 10, 2011
Priority date	—
Expiry date	Jul 4, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/833
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided, on its main surface (9) facing away from the active region (19), with a reflective contact metallization (6) comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.