Termination and contact structures for a high voltage GaN-based heterojunction transistor
US7939853B2 · kind B2 · utility
22Cited by
1References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 20, 2007 |
| Grant date | May 10, 2011 |
| Priority date | — |
| Expiry date | Sep 5, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/602
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided that includes a substrate, a first active layer disposed over the substrate, and a second active layer disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. A termination layer, which is disposed on the second active layer, includes InGaN. Source, gate and drain contacts are disposed on the termination layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.