Patent · US Active

Magnetoresistive device

US7939870B2 · kind B2 · utility

8Cited by
1References
52Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 26, 2008
Grant dateMay 10, 2011
Priority date
Expiry dateNov 26, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N50/85
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A magnetoresistive device comprises a ferromagnetic region, a non-ferromagnetic region, an insulating region and a conductive region. The insulating region is arranged between the ferromagnetic region and the conductive region so as to provide a tunnel barrier. The non-ferromagnetic region separates the insulating region and the ferromagnetic region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.