Semiconductor device and method of manufacturing a semiconductor device

US7939885B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Mathias von Borcke · Munich, DE
• Markus Zundel · Egmating, DE
• Uwe Schmalzbauer · Neubiberg, DE

Key dates

• Filing date: Apr 30, 2008
• Grant date: May 10, 2011
• Expiry date: Dec 29, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A semiconductor device has a substrate having a plurality of neighboring trenches, and a contact area, one mesa stripe each being formed between two neighboring trenches. The contact area contacts mesa stripes and surrounds an opening region in which the contact area is not formed and which is formed such that the contact area contacts the same mesa stripes at two positions between which the opening region is arranged, and the opening region having a region of elongate extension which intersects the mesa stripes in a skewed or perpendicular manner.