Semiconductor device and its manufacturing method
US7939893B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2010 |
| Grant date | May 10, 2011 |
| Priority date | — |
| Expiry date | Aug 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A semiconductor device manufacturing method includes, forming isolation region having an aspect ratio of 1 or more in a semiconductor substrate, forming a gate insulating film, forming a silicon gate electrode and a silicon resistive element, forming side wall spacers on the gate electrode, heavily doping a first active region with phosphorus and a second active region and the resistive element with p-type impurities by ion implantation, forming salicide block at 500° C. or lower, depositing a metal layer covering the salicide block, and selectively forming metal silicide layers. The method may further includes, forming a thick and a thin gate insulating films, and performing implantation of ions of a first conductivity type not penetrating the thick gate insulating film and oblique implantation of ions of the opposite conductivity type penetrating also the thick gate insulating film before the formation of side wall spacers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.