Semiconductor device including a digital semiconductor element and an analog semiconductor element in a common semiconductor device
US7939907B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2007 |
| Grant date | May 10, 2011 |
| Priority date | — |
| Expiry date | Sep 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10734
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High density mounting and power source sharing are achieved by a digital semiconductor element and an analog semiconductor element provided in a common semiconductor device. A power layer for analog operation is connected to one end of an EBG (Electromagnetic Band Gap) layer, a power layer for digital operation is connected to the other end of the EBG layer, ground terminals for the respective elements are connected to a common ground layer, and a ground layer for separating the power layer for analog operation and the EBG layer from each other is disposed between the power layer for analog operation and the EBG layer. Thereby, high density mounting is achieved along with reducing interference of the power source to an analog chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.