Patent · US Active

Micromechanical Hf switching element and method for the production thereof

US7939993B2 · kind B2 · utility

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9References

10Claims

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Assignee

Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

Thomas Lisec · Itzehoe, DE
Christoph Huth · Itzehoe, DE

Key dates

Filing date	May 27, 2005
Grant date	May 10, 2011
Priority date	—
Expiry date	Jun 26, 2027

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T29/49105
WIPO fieldTelecommunications
WIPO sectorElectrical engineering

Abstract

The present invention relates to a micromechanical HF switching element, in which a freestanding movable element is situated above a metallic surface on a substrate in such way that it is drawn to the metallic surface, to which a dielectric layer is applied, by applying an electrical voltage between the metallic surface and the movable element. The present invention also relates to a method for producing micromechanical HF switching elements of this type, in which the dielectric layer is deposited on the metal surface. The present method is distinguished in that a piezoelectric AlN layer having a columnar, polycrystalline structure and a texture is deposited on the metallic surface as the dielectric layer. Significantly reduced charging of the dielectric material and increased long-term stability of the switching element are achieved by the present method and the HF switching element thus produced.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.