Method of growing boron doped single crystal diamond in a plasma reactor
US7942966B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2004 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Sep 23, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described, as well as a system for use in performing such a method, and articles incorporating such a composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.