Embedded microelectromechanical systems (MEMS) semiconductor substrate and related method of forming
US7943410B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2008 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Jun 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/40
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An embedded MEMS semiconductor substrate is set forth and can be a starting material for subsequent semiconductor device processing. A MEMS device is formed in a semiconductor substrate, including at least one MEMS electrode and a buried silicon dioxide sacrificial layer has been applied for releasing the MEMS. A planarizing layer is applied over the substrate, MEMS device and MEMS electrode. A polysilicon protection layer is applied over the planarizing layer. A silicon nitride capping layer is applied over the polysilicon protection layer. A polsilicon seed layer is applied over the polysilicon nitride capping layer. The MEMS device is released by removing at least a portion of the buried silicon dioxide sacrificial layer and an epitaxial layer is grown over the polysilicon seed layer to be used for subsequent semiconductor wafer processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.