Method for manufacturing SOI substrate
US7943414B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2009 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Jul 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2007
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.