Methods of sputtering cadmium sulfide layers for use in cadmium telluride based thin film photovoltaic devices
US7943415B1 · kind B1 · utility
5Cited by
14References
15Claims
0Family size
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Key dates
| Filing date | Oct 27, 2010 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Oct 27, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods are generally provided of sputtering a cadmium sulfide layer on a substrate. The cadmium sulfide layer can be sputtered on a substrate from a target in a sputtering atmosphere, wherein the target comprises about 75% to about 100% by weight cadmium, and wherein the sputtering atmosphere comprises a sulfur-containing source gas. The cadmium sulfide layer can be used in methods of forming cadmium telluride thin film photovoltaic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.