Composite wafers having bulk-quality semiconductor layers and method of manufacturing thereof

US7943485B2 · kind B2 · utility

Assignee

• Group4 Labs, Inc. · US

Inventors

• Daniel Francis · Oakland, US
• Felix Ejeckam · San Francisco, US
• John Wasserbauer · Castro Valley, US
• Firooz Faili · Los Gatos, US
• Dubravko Babic · Santa Clara, US

Key dates

• Filing date: Jan 22, 2008
• Grant date: May 17, 2011
• Expiry date: Mar 12, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/30
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Method for producing composite wafers with thin high-quality semiconductor films atomically attached to synthetic diamond wafers is disclosed. Synthetic diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited on bulk semiconductor wafer which has been prepared to allow separation of the thin semiconductor film from the remaining bulk semiconductor wafer. The remaining semiconductor wafer is available for reuse. The synthetic diamond substrate serves as heat spreader and a mechanical substrate.