Patent · US Active

Multi-level data memorisation device with phase change material

US7943923B2 · kind B2 · utility

11Cited by

4References

27Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

Serge Gidon · La Murette, FR

Key dates

Filing date	Feb 25, 2008
Grant date	May 17, 2011
Priority date	—
Expiry date	Feb 19, 2029

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/71
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A data memorization device including at least: a stack of layers including at least one memory layer based on a phase change material arranged between at least two insulating layers, placed on a substrate, a plurality of columns arranged in the stack of layers, and passing through each layer of the stack, each of the columns being based on at least one electrically conducting material, and a plurality of memorization elements formed by annular portions of the at least one memory layer surrounding columns.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.