Nonvolatile memory device and nonvolatile memory array including the same
US7943926B2 · kind B2 · utility
3Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2007 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Dec 4, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device having self-presence diode characteristics, and/or a nonvolatile memory array including the nonvolatile memory device may be provided. The nonvolatile memory device may include a lower electrode, a first semiconductor oxide layer on the lower electrode, a second semiconductor oxide layer on the first semiconductor oxide layer, and/or an upper electrode on the second semiconductor oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.