III-nitride based on semiconductor device with low-resistance ohmic contacts
US7943949B2 · kind B2 · utility
2Cited by
3References
17Claims
0Family size
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Key dates
| Filing date | Sep 9, 2004 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Sep 9, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention utilizes high-indium-content InxGa1-xN islands (0<x≦1) formed on a top of a p-type GaN based layer to reduce contact resistance between an electrode and the p-type GaN based layer. These InxGa1-xN islands serve as channels for electrical current to flow through and dramatically reduce the contact resistance between the electrode and the p-type GaN based layer so as to improve device performance. This structure of InxGa1-xN islands can be applied to all III-nitride based electronic and optoelectronic devices requiring good p-type ohmic contacts to improve device performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.