Monolithic semiconductor switches and method for manufacturing

US7943955B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Oliver Haeberlen · Villach, AT
• Walter Rieger · Arnoldstein, AT
• Lutz Goergens · Villach, AT
• Martin Poelzl · Ossiach, AT
• Johannes Schoiswohl · San Jose, US
• Joachim Krumrey · Eisenlohrsweg, AT

Key dates

• Filing date: Jan 27, 2009
• Grant date: May 17, 2011
• Expiry date: Jan 27, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0195
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

One aspect is monolithic semiconductor switches and method for manufacturing. One embodiment provides one semiconductor die with a first and a second FET. One of source/drain of the first FET and one of source/drain of the second FET are electrically coupled to at least one contact area at a first side of one semiconductor die, respectively. The other one of source/drain of the first FET, a gate of the first FET, the other one of source/drain of the second FET and the gate of the second FET are electrically coupled to contact areas at a second side of the one semiconductor die opposite to the first side, respectively. The contact areas of the other one of source/drain of the first FET, of the gate of the first FET, of the other one of source/drain of the second FET and of the gate of the second FET are electrically separated from each other, respectively.