Accelerated particle and high energy radiation sensor

US7944012B2 · kind B2 · utility

Assignee

• THE SCIENCE AND TECHNOLOGY FACILITIES COUNCIL · GB

Inventors

• Renato Turchetta · Abingdon, GB
• Giulio Enrico Villani · Felton, GB
• Mark Prydderch · City of London, GB

Key dates

• Filing date: May 7, 2004
• Grant date: May 17, 2011
• Expiry date: May 7, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/18

Abstract

An accelerated electron detector comprises an array of monolithic sensors in a CMOS structure, each sensor comprising a substrate (10), an epi layer (11), a p+ well (12) and n+ wells (13) which are separated from the p+ well (12) by the epi layer (11). Integrated in the p+ well are a plurality of NMOS transistors. The sensor also includes a deep n region (15) beneath the p+ well (12) which establishes within the epi layer a depletion layer so that on application of a biasing voltage charge carriers generated in the epi layer are caused to drift to the n+ well (13). The detector has improved radiation hardness and it therefore suitable for the detection and imaging of accelerated electrons such as in electron microscopes.