Semiconductor device and method of manufacturing the same
US7944053B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2008 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Jun 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first insulating film is formed on a semiconductor substrate. A first interconnection is formed in a trench formed in the first insulating film. A first barrier film is formed between the first interconnection and first insulating film. A second insulating film is formed on the upper surface of the first interconnection, and in a first hollow portion between the side surface of the first barrier film and the first insulating film. The second insulating film is formed from the upper surface of the first interconnection to a depth higher than the bottom surface of the first interconnection. The first hollow portion is formed below the bottom surface of the second insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.