Quantum cascade laser amplifier with an anti-reflection coating including a layer of yttrium fluoride
US7944959B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2007 |
| Grant date | May 17, 2011 |
| Priority date | — |
| Expiry date | Mar 12, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3401
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A quantum cascade laser amplifier (12) having an active zone (20) includes a stack of raw layers of semi-conductor materials formed in an epitaxial manner on a substrate layer (16) of indium. phosphide (InP) or gallium arsenide (GaAs) bearing the active zone (20), and a vertical anti-reflection coating (34) that covers an outlet face (28) of the laser radiation made of materials having given refraction indices and a predetermined thickness so that the entire laser radiation can flow through the outlet face. The anti-reflection coating (34) includes a first layer (36) having a first predetermined retraction index (n1) lower than the predetermined refraction index (nD), and at least a second layer (38) having a second refraction index (n2) higher than the predetermined refraction index (nD), wherein the first layer (36) of the anti-reflection coating (34) is made of yttrium fluoride (YF3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.