Patent · US Active

Recovery while programming non-volatile memory (NVM)

US7945825B2 · kind B2 · utility

153Cited by

34References

12Claims

0Family size

Assignee

Spansion Isreal, Ltd · IL

Inventors

Itzic Cohen · Netanya, IL
Ori Tirosh · Matan, IL
Kobi Danon · Nes Ziona, IL
Shmulik Hadas · Nes Ziona, IL

Key dates

Filing date	Nov 25, 2008
Grant date	May 17, 2011
Priority date	—
Expiry date	Aug 12, 2029

Classification

Technology area (CPC G)Physics
CPC primaryG11C2211/5643
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Disclosed are methods and circuits for performing recovery associated with programming of non-volatile memory (NVM) array cells. According to embodiments, there are provided methods and circuits for programming NVM cells, including: (1) erasing NVM array cells; (2) loading an SRAM with user data; (3) if programming is successful, then flipping bits in the SRAM; and (4) if programming is not successful, reading data back from the array to the SRAM.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.