Method for measuring gases and/or minimizing cross sensitivity in FET-based gas sensors

US7946153B2 · kind B2 · utility

Assignee

• Micronas GmbH · DE

Inventors

• Maximilian Fleischer · Ehrenkirchen, DE
• Uwe Lampe · Buxtehude, DE
• Hans Meixner · Haar, DE
• Roland Pohle · Füssen, DE
• Elfriede Simon · Munich, DE

Key dates

• Filing date: Apr 22, 2005
• Grant date: May 24, 2011
• Expiry date: Dec 17, 2027

Classification

• Technology area (CPC G): Physics
• CPC primary: G01N33/006
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A gas sensor based on a field effect transistor (“FET”) evaluates both a change in work function of a gas-sensitive layer of the FET and a change in the capacitance of the layer. Thus, two physically independent signals are read from the gas-sensitive layer, each signal representing a sensitivity to a different gas. This reduces the effect of cross-sensitivities; that is, of one gas on the target gas. The underlying physical mechanisms, the first causing a change in the work function in a reaction with gases and the second causing a change in the capacitance of the sensitive layer, are widely different. Because of this, the two parameters demonstrate different gas sensitivities. If the reactions to both gases are known, the effect of the interfering gas on the sensor signal can be compensated for, and with this the concentration of the target gas can be determined.