Method for manufacturing chemical mechanical polishing pad polishing layers having reduced gas inclusion defects
US7947098B2 · kind B2 · utility
3Cited by
14References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2009 |
| Grant date | May 24, 2011 |
| Priority date | — |
| Expiry date | Dec 8, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB29B7/7471
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
A method for manufacturing chemical mechanical polishing pad polishing layers that minimizes entrained gas inclusion defects is provided. Also provided is a mix head assembly for use in the manufacture of chemical mechanical polishing pad polishing layers, wherein inclusions of entrained gas inclusion defects are minimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.