Method and apparatus for plasma enhanced chemical vapor deposition
US7947337B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2007 |
| Grant date | May 24, 2011 |
| Priority date | — |
| Expiry date | Mar 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32266
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for coating substrates by means of plasma enhanced vapor deposition are provided, in which at least part of the surroundings of the substrate surface of a substrate to be coated is evacuated and a process gas with a starting substance for the coating is admitted, wherein the coating is deposited by a plasma being ignited by radiating in electromagnetic energy in the surroundings of the substrate surface filled with the process gas. The electromagnetic energy is radiated in by a multiplicity of pulse sequences, preferably microwave or radiofrequency pulses, with a multiplicity of pulses spaced apart temporally by first intermissions, wherein the electromagnetic energy radiated in is turned off in the intermissions, and wherein the intermissions between the pulse sequences are at least a factor of 3, preferably at least a factor of 5, longer than the first intermissions between the pulses within a pulse sequence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.