Method of fabricating semiconductor device having semiconductor elements
US7947554B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 28, 2007 |
| Grant date | May 24, 2011 |
| Priority date | — |
| Expiry date | Jul 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
Abstract
According to an aspect of the invention, there is provided a semiconductor device including a first semiconductor element formed on a semiconductor substrate and using electrons as carriers, and a second semiconductor element formed on the semiconductor substrate and using holes as carriers, a first insulating film and a second insulating film formed on source/drain regions and gate electrodes of the first element and the second element, the first insulating film having tensile stress with respect to the first element, and the second insulating film having compression stress with respect to the second element, and sidewall spacers of the gate electrodes of the first element and the second element, at least portions of the sidewall spacers being removed, wherein at least one of the first insulating film and the second insulating film does not close a spacing between the gate electrodes of the first element and the second element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.