Method of manufacturing semiconductor device
US7947568B2 · kind B2 · utility
1Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2009 |
| Grant date | May 24, 2011 |
| Priority date | — |
| Expiry date | Aug 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes a process of forming a STI trench in a substrate, a process of forming a thermal oxide film on a sidewall and a bottom surface of the STI trench, a process of performing a plasma treatment on a surface of the thermal oxide film that is located at a bottom portion of the STI trench, and a process of forming an insulating film in the STI trench using a CVD method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.