Thin film transistor
US7947977B2 · kind B2 · utility
46Cited by
6References
17Claims
0Family size
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Key dates
| Filing date | Apr 2, 2009 |
| Grant date | May 24, 2011 |
| Priority date | — |
| Expiry date | Apr 2, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/936
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is electrically connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The at least one of the source electrode, drain electrode, and the gate electrode includes a metallic carbon nanotube layer. The metallic carbon nanotube layer includes a plurality of metallic carbon nanotubes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.