High efficiency lighting device
US7947991B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2008 |
| Grant date | May 24, 2011 |
| Priority date | — |
| Expiry date | Mar 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
A high efficiency lighting device comprising a light emitting diode structure, an eutectic layer and a distributed-Bragg reflecting layer (DBR) therebetween is disclosed. The distributed-Bragg reflecting layer is attached to said light emitting diode structure by vapor deposition and comprises a plurality of high refraction layers, a plurality of low refraction layers and a micro-contact layer array. The high refraction layers and said low refraction layers are arranged in an alternating manner, so as to form a stacked thin film having an alternate high/low refraction pattern. The micro-contact layers are in said stacked thin film and extend vertically through the stacked thin film, therefore connecting said light emitting diode structure and said eutectic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.