Insulated-gate bipolar transistor (IGBT)
US7948005B2 · kind B2 · utility
5Cited by
4References
6Claims
0Family size
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Key dates
| Filing date | May 15, 2008 |
| Grant date | May 24, 2011 |
| Priority date | — |
| Expiry date | Apr 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A fourth semiconductor region of a first conduction type is provided in a partial region of a third semiconductor region of a second conduction type. This configuration enhances the blocking voltage at the time when the sheet carrier concentration of a fifth semiconductor region is enhanced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.