Photodiode with high ESD threshold
US7948006B2 · kind B2 · utility
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2References
15Claims
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Key dates
| Filing date | Jun 1, 2009 |
| Grant date | May 24, 2011 |
| Priority date | — |
| Expiry date | Jan 19, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
A photodetector with an improved electrostatic discharge damage threshold is disclosed, suitable for applications in telecommunication systems operating at elevated data rates. The photodetector may be a PIN or an APD fabricated in the InP compound semiconductor system. The increased ESD damage threshold is achieved by reducing the ESD induced current density in the photodetector by a suitable widening of the contact at a critical location, increasing the series resistance and promoting lateral current spreading by means of a current spreading layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.