Off-center deposition of organic semiconductor in an organic semiconductor device
US7948016B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2009 |
| Grant date | May 24, 2011 |
| Priority date | — |
| Expiry date | Dec 19, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/484
Abstract
The present disclosure provides a method of making a thin film semiconductor device such as a transistor comprising the steps of: a) providing a substrate bearing first and second conductive zones which define a channel therebetween, where the channel does not border more than 75% of the perimeter of either conductive zone; and b) depositing a discrete aliquot of a solution comprising an organic semiconductor adjacent to or on the channel, where a majority of the solution is deposited to one side of the channel and not on the channel. In some embodiments of the present disclosure, the solution is deposited entirely to one side of the channel, not on the channel, and furthermore the solution is deposited in a band having a length that is less than the channel length. The present disclosure additionally provides thin film semiconductor devices such as a transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.