Semiconductor device and method of fabricating semiconductor device
US7948031B2 · kind B2 · utility
2Cited by
5References
14Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jul 3, 2008 |
| Grant date | May 24, 2011 |
| Priority date | — |
| Expiry date | Mar 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
A semiconductor device includes a gate electrode formed through an insulating film in a groove having a first side surface adjacent to a source region and a base region, and a second conductive type first impurity region formed adjacent to a second side surface of the groove between the groove and a lead-out portion of a drain region existing below the base region so as to extend downward beyond a lower end of the groove.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.