Semiconductor device and semiconductor integrated circuit device for driving plasma display using the semiconductor device
US7948058B2 · kind B2 · utility
2Cited by
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14Claims
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Key dates
| Filing date | Apr 16, 2008 |
| Grant date | May 24, 2011 |
| Priority date | — |
| Expiry date | Sep 11, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2330/04
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A lateral IGBT structure having an emitter terminal including two or more base layers of a second conductivity-type for one collector terminal, in which the base layers of a second conductivity-type in emitter regions are covered with a first conductivity-type layer having a concentration higher than that of a drift layer so that a silicon layer between the first conductivity-type layer covering the emitter regions and a buried oxide film has a reduced resistance to increase current flowing to an emitter farther from the collector to thereby enhance the current density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.