Semiconductor device and method for manufacturing semiconductor device
US7948062B2 · kind B2 · utility
5Cited by
0References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2008 |
| Grant date | May 24, 2011 |
| Priority date | — |
| Expiry date | Aug 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a compound semiconductor laminated structure having a plurality of compound semiconductor layers formed over a semiconductor substrate, a first insulation film covering at least a part of a surface of the compound semiconductor laminated structure, and a second insulation film formed on the first insulation film, wherein the second insulation film includes more hydrogen than the first insulation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.