Semiconductor device with stress control film utilizing film thickness
US7948063B2 · kind B2 · utility
1Cited by
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16Claims
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Key dates
| Filing date | Jan 21, 2009 |
| Grant date | May 24, 2011 |
| Priority date | — |
| Expiry date | Jan 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
Abstract
Semiconductor devices required forming a stress control film to handle different stresses on each side when optimizing the stress on the respective P channel and N channel sections. A unique feature of the semiconductor device of this invention is that P and N channel stress are respectively optimized by making use of a stress control film jointly for the P and N channels that conveys stress in different directions by utilizing the film thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.