Carbon nanotube structure, a semiconductor device, a semiconductor package and a manufacturing method of a semiconductor device
US7948081B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2005 |
| Grant date | May 24, 2011 |
| Priority date | — |
| Expiry date | Aug 10, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/936
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device uses a carbon nanotube structure, which reduces an electric resistance and a thermal resistance by increasing a density of the carbon nanotubes. An insulation film covers a first electrically conductive material. A second electrically conductive material is provided on the insulation film. A plurality of carbon nanotubes extend through the insulation film by being filled in an opening part that exposes the first electrically conductive material. The carbon nanotubes electrically connect the first electrically conductive material and the second electrically conductive material to each other. Ends of the carbon nanotubes are fixed to a recessed part provided on a surface of the first electrically conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.