Pixel having an organic light emitting diode and method of fabricating the pixel
US7948170B2 · kind B2 · utility
51Cited by
36References
29Claims
0Family size
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Key dates
| Filing date | Feb 24, 2004 |
| Grant date | May 24, 2011 |
| Priority date | — |
| Expiry date | Oct 25, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/3026
Abstract
A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.