Patent · US Active

Magnetic sensor and method for producing the same

US7948234B2 · kind B2 · utility

0Cited by
1References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 19, 2010
Grant dateMay 24, 2011
Priority date
Expiry dateJul 19, 2030

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49002
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A magnetoresistive element includes, in plan view, an element section and an extension region extending from an end portion of the element section; and an insulation layer is formed on the element section and the extension region. A contact hole having a recessed shape, penetrating through the insulation layer, and extending at least to the extension region is formed; an electrode pad is formed in the contact hole; a surface of the electrode pad is exposed to outside; and the electrode pad is electrically connected to the extension region. The element section and the extension region are integrally formed so as to have an identical layer configuration employing a magnetoresistive effect in which electrical resistance varies in response to external magnetic fields.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.