Method of making a deposit on an SiC-covered substrate
US7950139B2 · kind B2 · utility
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5References
4Claims
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Key dates
| Filing date | Apr 24, 2008 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Nov 5, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49103
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The invention relates to a method of depositing a coating on a part having its surface made of silicon carbide. The method comprises the following steps: The invention also provides a device for measuring deformation, which device comprises a first alumina coating obtained by atmospheric thermal spraying onto the silicon carbide layer covering the substrate of the part after it has been treated by superposing laser impacts, a free filament strain gauge placed on the coating, and an additional alumina coating obtained by atmospheric thermal spraying onto the strain gauge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.