Substrate processing apparatus and semiconductor device producing method
US7950348B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2005 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Aug 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67253
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate processing apparatus is provided with a reaction chamber (201), a substrate rotating mechanism (267) for rotating a wafer (200), and a gas supplying part for supplying the wafer (200) with gas. At least two types of gases A and B are alternately supplied a plurality of times, and a desired film is formed on the wafer (200). A control part (321) is provided to control a rotation cycle of the wafer (200) so as not to synchronize a gas supply cycle, which is prescribed by a period between a time when the gas A is flowed and a time when the gas A is flowed subsequently, with the rotation cycle of the wafer (200), at least for a time the alternate gas supply is performed prescribed times. The thickness uniformity of a film formed by an ALD method within the substrate plane is prevented from deteriorating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.