Methods for oriented growth of nanowires on patterned substrates
US7951422B2 · kind B2 · utility
15Cited by
72References
37Claims
0Family size
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Key dates
| Filing date | Dec 20, 2006 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Oct 8, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24917
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.