Reticle for projection exposure apparatus and exposure method using the same
US7951512B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Mar 6, 2009 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Jan 9, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/7084
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In order to provide a reticle capable of increasing the number of chips per wafer and of enabling highly accurate alignment, and an exposure method using the reticle, a first alignment mark arrangement region (8) and a second alignment mark arrangement region (9) are provided on both sides of a multi-chip region (2) so that a sum of a size of the first alignment mark arrangement region and a size of the second alignment mark arrangement region is made the same as a size of a chip region (1).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.