Method of fabricating non-volatile memory device having separate charge trap patterns

US7951671B2 · kind B2 · utility

Assignee

• SAMSUNG ELECTRONICS CO., LTD. · KR

Inventors

• Ju Wan LIM · Suwon-si, KR
• Hyun Seok Jang · Daegu, KR
• Byung-Hong Chung · Seoul, KR
• Ki-Hyun Hwang · Seongnam-si, KR
• Sang-Ryol Yang · Hwaseong-si, KR

Key dates

• Filing date: May 11, 2009
• Grant date: May 31, 2011
• Expiry date: May 11, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A method of fabricating a non-volatile memory device includes forming an isolation trench in a semiconductor substrate, and the isolation trench defines first and second fins. The method further includes forming an isolation layer partially filling the isolation trench, forming first and second charge trap patterns respectively covering parts of the first and second fins projecting from the isolation layer, and forming a control gate electrode covering the first and second charge trap patterns and crossing the first and second fins.