Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
US7951696B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2008 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Aug 28, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for simultaneously forming doped regions of opposite conductivity using non-contact printing processes are provided. In one exemplary embodiment, a method comprises the steps of depositing a first liquid dopant comprising first conductivity-determining type dopant elements overlying a first region of a semiconductor material and depositing a second liquid dopant comprising second conductivity-determining type dopant elements overlying a second region of the semiconductor material. The first conductivity-determining type dopant elements and the second conductivity-determining type dopant elements are of opposite conductivity. At least a portion of the first conductivity-determining type dopant elements and at least a portion of the second conductivity-determining type dopant elements are simultaneously diffused into the first region and into the second region, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.