Photoresist stripper composition for semiconductor manufacturing
US7951765B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2006 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | May 6, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/426
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a photoresist stripper composition for removing the photoresist in the manufacturing process of the semiconductor device. More particularly, the photoresist stripper composition comprises 3-20 wt % of hydrazine hydrate or amine compound; 20˜40 wt % of polar solvent; 0.01-3 wt % of corrosion inhibitor selected from the group consisting of imidazoline derivative, sulfide derivative, sulfoxide derivative, aromatic compound or aromatic compound with hydroxyl group; 0.01-5 wt % of monoalcohol compound of C2-C10; and 40-70 wt % of deionized water. The photoresist stripper composition for manufacturing the semiconductor can remove the photoresist film thermoset by hard bake, dry etching, ashing or ion implantation and denatured by the metallic by-product etched from the bottom metallic film in said process at low temperature easily and quickly, and minimize the corrosion of the bottom metallic wiring in the removing process of the photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.