Bonding wire for semiconductor device
US7952028B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 20, 2009 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Jan 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A high-performance bonding wire that is suitable for semiconductor mounting technology, such as stacked chip bonding, thinning, and fine pitch mounting, where wire lean (leaning) at an upright position of a ball and spring failure can be suppressed and loop linearity and loop height stability are excellent. This bonding wire for a semiconductor device includes a core material made of a conductive metal, and a skin layer formed on the core material and containing a metal different from the core material as a main component; wherein a relationship between an average size (a) of crystal grains in the skin layer on a wire surface along a wire circumferential direction and an average size (b) of crystal grains in the core material on a normal cross section, the normal cross section being a cross section normal to a wire axis, satisfies an inequality of a/b≦0.7.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.