Phase-change nonvolatile memory device using Sb-Zn alloy
US7952086B2 · kind B2 · utility
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Key dates
| Filing date | May 16, 2008 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Mar 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/881
Abstract
Provided are a phase-change nonvolatile memory device and a manufacturing method thereof. The device includes: a substrate; and a stack structure disposed on the substrate and including a phase-change material layer. The phase-change material layer is formed of an alloy of antimony (Sb) and zinc (Zn), so that the phase-change memory device can stably operate at high speed and reduce power consumption.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.