CMOS image sensor with improved backside surface treatment
US7952096B2 · kind B2 · utility
61Cited by
4References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 8, 2008 |
| Grant date | May 31, 2011 |
| Priority date | — |
| Expiry date | Oct 22, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
An apparatus and method for fabricating an array of backside illuminated (“BSI”) image sensors is disclosed. Front side components of the BSI image sensors are formed into a front side of the array. A dopant layer is implanted into a backside of the array. The dopant layer establishes a dopant gradient to encourage photo-generated charge carriers to migrate towards the front side of the array. At least a portion of the dopant layer is annealed. A surface treatment is formed on the backside of the dopant layer to cure surface defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.